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실리콘 산화아연 박막트랜지스터의 제작 및 특성 분석Fabrication and characterization of silicon zinc oxide thin film transistors
- Other Titles
- Fabrication and characterization of silicon zinc oxide thin film transistors
- Issue Date
- Jul-2012
- Publisher
- 대한전기학회
- Citation
- 2012년도 대한전기학회 하계학술대회 논문집, pp 1036 - 1037
- Pages
- 2
- Indexed
- OTHER
- Journal Title
- 2012년도 대한전기학회 하계학술대회 논문집
- Start Page
- 1036
- End Page
- 1037
- Abstract
- Transparent thin film transistors (TFTs) using silicon zinc oxide (SZO) films as an active channel. The SZO films were deposited at room temperature via radio frequency magnetron sputtering by attaching a boron-doped silicon chip to the target. The effects of the gas flow ratio of O2/Ar and thermal annealing on the electrical characteristics of SZO-TFTs were extensively investigated. The structure and transmittance of SZO films were also characterized by X-ray diffraction (XRD) and UV/Vis spectrometer.
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Related Researcher
- PARK, JIN SEOK
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)