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Efficiency droop in AlGaInP and GaInN light-emitting diodes
- Authors
- Shim, Jong-In; Han, Dong-Pyo; Kim, Hyunsung; Shin, Dong-Soo; Lin, Guan-Bo; Meyaard, David S.; Shan, Qifeng; Cho, Jaehee; Schubert, E. Fred; Shim, Hyunwook; Sone, Cheolsoo
- Issue Date
- Mar-2012
- Publisher
- American Institute of Physics
- Keywords
- QUANTUM-WELL LASERS
- Citation
- Applied Physics Letters, v.100, no.11, pp 1 - 5
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 100
- Number
- 11
- Start Page
- 1
- End Page
- 5
- ISSN
- 0003-6951
1077-3118
- Abstract
- At room temperature, AlGaInP pn-junction light-emitting diodes (LEDs) emitting at 630 nm do not exhibit an efficiency droop. However, upon cooling the AlGaInP LEDs to cryogenic temperatures, they show a pronounced efficiency droop. We attribute the efficiency droop in AlGaInP LEDs to electron-drift-induced reduction in injection efficiency (i.e., carrier leakage out of the active region) mediated by the asymmetry of the pn junction, specifically the disparity between electron and hole concentrations and mobilities, with the concentration disparity exacerbated at low temperatures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694044]
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Related Researcher
- Shin, Dong Soo
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)