ScholarWorks@Hanyang University ERICA Campus: 2. Conference Papers

2. Conference Papers(COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 2. Conference Papers)812

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Collection's Items (Sorted by Issue Date in Descending order): 361 to 380 of 812

미분 운반자 수명 측정을 통한 청색 LED의 운반자 재결합 분석

ConferenceIssue Date2015Place포항공과대학교

short-circuit current 특성의 온도 변화를 통한 운반자 넘침에 관한 연구

ConferenceIssue Date2015Place포항공과대학교

시간분해 광 펌핑과 전류주입에 따른 내부양자효율 저하의 상관 관계 연구

ConferenceIssue Date2015Place포항공과대학교

청색 발광 다이오드의 정전기방전을 통한 누설전류 전도현상 분석

ConferenceIssue Date2015Place포항공과대학교

Relationship between changes of the refractive index and the absorption coefficient of the InGaN/GaN multiple quantum well structure of a blue light-emitting diodes

ConferenceIssue Date2015Place포항공과대학교

광전지 효과를 이용한 청색 발광다이오드의 ideality factor에 대한 연구

ConferenceIssue Date2015Place포항공과대학교

2차공진기를 이용한 Nd:YAG 레이저의 공간모드 선택

ConferenceIssue Date2015Place대전 컨벤션센터

광섬유 패브리-패롯 공진기를 사용한 자발펄싱 억제 Yb 광섬유 레이저

ConferenceIssue Date2015Place대전컨벤션센터

Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes

ConferenceIssue Date2014PlaceChina

Variation in series resistance under high device current in InGaN-based light-emitting diodes

ConferenceIssue Date2014PlaceDaegu, Korea

Variationm in Series Resistance under High Device Current in InGaN-Based Light-Emitting Diodes

ConferenceIssue Date2014Place대구

Effects of quantum-well number on the performance of near-ultraviolet light-emitting diodes

ConferenceIssue Date2014PlaceWroclaw, Poland

Advanced characterization techniquesof p−(Al)GaN layers in GaN-based blue light-emitting diodes

ConferenceIssue Date2014PlaceWroclaw, Poland

Conduction mechanism of leakage current at both forward and reverse biases in InGaN/GaN-based light-emitting diodes

ConferenceIssue Date2014PlaceWroclaw, Poland

Conduction Mechanism of Leakage Current under Reverse Biases in InGaN/GaN-Based Light-Emitting Diodes

ConferenceIssue Date2014PlaceWrocław, Poland

Advanced Characterization Techniques of p-(Al)GaN Layers in GaN-Based Light-Emitting Diodes

ConferenceIssue Date2014PlaceWrocław, Poland

InGaN/GaN 청색 발광 다이오드의 곡저온에서의 재결합 메커니즘 분석

ConferenceIssue Date2014Place경희대학교

개방회로와 단락회로에 따른 질화물계 발광다이오드의 Photoluminescence과 Photoluminescence 곡선에 대한 고찰

ConferenceIssue Date2014Place경희대학교

InGaN 기반 White LED의 장시간 고온 노출에 따른 중심파장 변화 연구

ConferenceIssue Date2014Place경희대학교

InGaN/GaN LED에서의 온도의 증가에 따른 재결합 메커니즘 분석

ConferenceIssue Date2014Place경희대학교

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