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Effects of interfacial strength and dimension of structures on physical cleaning window

Authors
Kim, Tae GonPacco, AntoineWostyn, KurtBrems, StevenXu, XiumeiStruyf, HerbertArstila, KaiVandevelde, B.Park, Jin-GooDe Gendt, StefanMertens, Paul.W.Heyns, Marc
Issue Date
Dec-2011
Publisher
Scitec Publications Ltd.
Keywords
Cleaning process window; Particle removal; Pattern collapse; Physical cleaning
Citation
Solid State Phenomena, v.187, pp 123 - 126
Pages
4
Indexed
SCIE
SCOPUS
Journal Title
Solid State Phenomena
Volume
187
Start Page
123
End Page
126
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/36187
DOI
10.4028/www.scientific.net/SSP.187.123
ISSN
1012-0394
1662-9779
Abstract
Four different types of FINs; amorphous Si (a-Si), annealed a-Si, polycrystalline Si (poly-Si) and crystalline Si (c-Si) were used to investigate the effect of interfacial strength and the length of structures on the physical cleaning window by measuring their collapse forces by atomic force microscope (AFM). A transmission electron microscope (TEM) and a nano-needle with a nano-manipulator in a scanning electron microscope (SEM) were employed in order to explain the different collapse behavior and their forces. Different fracture shapes and collapse forces of FINs could explain the influence of the interfacial strength on the pattern strength. Furthermore, the different lengths of a-Si FINs were prepared and their collapse forces were measured and the shorter length reduced their pattern strength. Strong adhesion at the interface resulted in a wider process window while smaller dimensions made the process window narrower. © (2012) Trans Tech Publications.
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COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles

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Park, Jin Goo
ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
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