In-situ XPS study on ALD (Atomic Layer Deposition) of high-k dielectrics: La 2O 3 using La-formidinate and ozone
- Authors
- Kim, Jiyoung; Kim, Hyun chul; Wallace, Robert.M.; Park, Tae joo
- Issue Date
- 2012
- Publisher
- Electrochemical Society, Inc.
- Citation
- ECS Transactions, v.45, no.3, pp.95 - 101
- Indexed
- SCOPUS
- Journal Title
- ECS Transactions
- Volume
- 45
- Number
- 3
- Start Page
- 95
- End Page
- 101
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/36233
- DOI
- 10.1149/1.3700876
- ISSN
- 1938-5862
- Abstract
- The detailed growth behavior of lanthanum oxide (La 2O 3) on a silicon substrate during atomic layer deposition (ALD) is investigated by in-situ, x-ray photoelectron spectroscopy (XPS) following individual ALD pulses of tris(N,N′-diisopropyl-formamidinato) lanthanum [La( iPrfAMD) 3] and highly concentrated ozone (∼390 g/m 3). At the initial growth stage, ozone oxidized the La-ligand as well as the silicon substrate. During oxidation of silicon substrate, a noticeable amount of silicon atoms diffused into growing La 2O 3 film, resulting in Si-rich and La-rich La-silicates showing composition gradient of La/Si at the deposition temperature of 250°C. The amount of La-silicate after third ALD cycle reached more than 50% of that generated by 30 cycles. As the thickness of the film increased with sequential ALD cycles, the substrate oxidation as well as the out-diffusion of Si atoms becomes a negligible quantity, and the pure La 2O 3 film starts growing leaving La-silicate layers at the interface. ©The Electrochemical Society.
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