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Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells
- Authors
- Yoo, H. K.; Lee, S. B.; Lee, J. S.; Chang, S. H.; Yoon, M. J.; Kim, Y. S.; Kang, B. S.; Lee, M. -J.; Kim, C. J.; Kahng, B.; Noh, T. W.
- Issue Date
- May-2011
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.98, no.18, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 98
- Number
- 18
- Start Page
- 1
- End Page
- 4
- ISSN
- 0003-6951
- Abstract
- We observed unipolar resistance switching in Pt/TaOx/Pt cells. We could make the cell have the bipolar resistance switching by inserting a stoichiometric Ta2O5 layer between Pt and TaOx layers. Bipolar resistance switching in Pt/Ta2O5/TaOx/Pt cells occurred reliably without applying an external compliance current. With increase in the Ta2O5 layer thickness, the current value at the low-resistance state became decreased but the forming voltage became increased. We could explain these intriguing phenomena using the interface-modified random circuit breaker network model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3587809]
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)