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Highly efficient InGaN/GaN blue LED grown on Si (111) substrate
- Authors
- Kim, Jun-Youn; Tak, Yongjo; Lee, Jae Won; Hong, Hyun-Gi; Chae, Suhee; Choi, Hyoji; Min, Bokki; Park, Youngsoo; Kim, Minho; Lee, Seongsuk; Cha, Namgoo; Shin, Yoonhee; Kim, Jong-Ryeol; Shim, Jong-In
- Issue Date
- May-2011
- Publisher
- IEEE
- Citation
- Optics InfoBase Conference Papers, pp.1 - 2
- Indexed
- SCIE
SCOPUS
- Journal Title
- Optics InfoBase Conference Papers
- Start Page
- 1
- End Page
- 2
- ISSN
- 2162-2701
- Abstract
- For the first time, based on the high crystalline quality of n-GaN on Si template, highly efficient InGaN/GaN LEDs grown on 4-inch silicon substrates comparable to those on sapphire substrates have been successfully demonstrated. At driving current of 350 mA, the overall output power of 1×1 mm2 LED chips exceeded 420 mW and forward voltage was 3.2 V under un-encapsulated condition, which is the best value among the reported values of blue LED grown on Si substrates. The internal quantum efficiency of 76% at injection current of 350 mA was measured. ©2011 Optical Society of America.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)