Effects of post plasma treatment on material properties and device characteristics in indium zinc oxide thin film transistors
- Authors
- Kim, Won; Bang, Jung-Hwan; Uhm, Hyun-Seok; Lee, Sang-Hyuk; Park, Jin-Seok
- Issue Date
- Dec-2010
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Indium zinc oxide (IZO); Thin film transistor (TFT); Plasma treatment; Contact resistance; X-ray photoelectron spectroscopy (XPS); Surface damage
- Citation
- THIN SOLID FILMS, v.519, no.5, pp.1573 - 1577
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 519
- Number
- 5
- Start Page
- 1573
- End Page
- 1577
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39256
- DOI
- 10.1016/j.tsf.2010.08.082
- ISSN
- 0040-6090
- Abstract
- Presented in this study are the results of an experiment that was performed regarding the effects of plasma post-treatment on the material properties of amorphous indium zinc oxide (a-IZO) films, and on the device characteristics of the thin film transistor when an a-IZO film is used as the channel layer. Prior to the source/drain deposition, post-treatment was performed on the area that was not covered by photoresist (PR), using Ar and H-2 plasma. The electrical resistivity of a-IZO films was dramatically reduced when they were plasma-treated. The creation of an oxygen vacancy and the formation of hydroxyls in the a-IZO film due to plasma treatment were identified via X-ray photoelectron spectroscopy (XPS) analysis. The change in the field effect mobility (mu(FE)) due to the plasma post-treatment was inversely proportional to the change in the contact resistance (R-C) of the plasma-treated a-IZO layer. The prolonged (>1 min) treatment using H-2 plasma caused deep electron traps and surface damages, resulting in the increased R-C (or decreased mu(FE)) of the a-IZO TFT. In addition, for the a-IZO TFT that underwent H-2 plasma treatment, the V-T monotonically decreased whereas the V-T of the a-IZO TFT that was Ar-plasma-treated remained almost the same as that of the untreated a-IZO TFT. (C) 2010 Elsevier B.V. All rights reserved.
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