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Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure
- Authors
- Hwang, Inrok; Lee, Myung-Jae; Buh, Gyoung-Ho; Bae, Jieun; Choi, Jinsik; Kim, Jin-Soo; Hong, Sahwan; Kim, Yeon Soo; Byun, Ik-Su; Lee, Seung-Woong; Ahn, Seung-Eon; Kang, Bo Soo; Kang, Sung-Oong; Park, Bae Ho
- Issue Date
- Aug-2010
- Publisher
- AMER INST PHYSICS
- Keywords
- FILMS; NONVOLATILE MEMORY
- Citation
- APPLIED PHYSICS LETTERS, v.97, no.5, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 97
- Number
- 5
- Start Page
- 1
- End Page
- 4
- ISSN
- 0003-6951
- Abstract
- We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10(-2) and 10(-4) s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity-and width-dependence of the switching transition and compositional difference on electrical properties in NiOx, we have proposed a model in which the migration of oxygen ions (O2-) is responsible for the switching transition in Pt/NiO/Pt structures. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3477953]
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)