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Noise Characteristics of Charge Tunneling via Localized States in Metal-Molecule-Metal Junctions

Authors
Kim, YoungsangSong, HyunwookKim, DongwooLee, TakheeJeong, Heejun
Issue Date
Aug-2010
Publisher
American Chemical Society
Keywords
molecular junctions; localized states; 1/f noise; random telegraph noise; shot noise
Citation
ACS Nano, v.4, no.8, pp.4426 - 4430
Indexed
SCIE
SCOPUS
Journal Title
ACS Nano
Volume
4
Number
8
Start Page
4426
End Page
4430
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39624
DOI
10.1021/nn100255b
ISSN
1936-0851
Abstract
We report the noise characteristics of charge transport through an alkyl-based metal-molecule-metal junction. Measurements of the 1/f noise, random telegraph noise, and shot noise demonstrated the existence of localized traps in the molecular junctions. These three noise measurements exhibited results consistent with trap-mediated tunneling activated over similar to 0.4 V by trapping and detrapping processes via localized states (or defects). The noise characterizations will be useful in evaluating the influences of localized states on charge transport in molecular or other electronic junctions.
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