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Reduced Metal Contamination in Atomic-Layer-Deposited HfO2 Films Grown on Si Using O-3 Oxidant Generated Without N-2 Assistance
- Issue Date
- May-2010
- Publisher
- Electrochemical Society, Inc.
- Keywords
- atomic layer deposition; dielectric thin films; electric breakdown; elemental semiconductors; etching; hafnium compounds; impurities; oxidation; silicon; stainless steel
- Citation
- Electrochemical and Solid-State Letters, v.13, no.8, pp.G65 - G67
- Indexed
- SCIE
SCOPUS
- Journal Title
- Electrochemical and Solid-State Letters
- Volume
- 13
- Number
- 8
- Start Page
- G65
- End Page
- G67
- ISSN
- 1099-0062
- Abstract
- The physicochemical and electrical properties of atomic-layer-deposited HfO2 films grown using O-3 generated with and without N-2 assistance were examined. Compared to the films grown using conventionally generated O-3 with N-2 assistance, the HfO2 film grown using O-3 generated without N-2 assistance had less metal impurities (mainly Cr) possibly due to the etching of stainless ozone delivery line. This induced a higher physical density of the film and a lower Si concentration in the film, which resulted in enhanced dielectric properties and reliability such as dielectric breakdown and resistance to constant voltage stress. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3430657] All rights reserved.
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Related Researcher
- Park, Tae Joo
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)