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Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change
- Authors
- Kim, Ki Hwan; Kang, Bo Soo; Lee, Myoung-Jae; Ahn, Seung-Eon; Lee, Chang Bum; Stefanovich, Genrikh; Xianyu, Wen Xu; Kim, Chang Jung; Park, Youngsoo
- Issue Date
- Oct-2009
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Cross-point; diode; memory; oxide
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.30, no.10, pp.1036 - 1038
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 30
- Number
- 10
- Start Page
- 1036
- End Page
- 1038
- ISSN
- 0741-3106
- Abstract
- A multilevel one-time programmable (OTP) oxide diode for cross-point memory is introduced. The oxide diode is composed of a thin-film p-CuO/n-InZnOx (IZO). By applying negative electrical pulses, the p-CuO/n-IZO diode exhibited multilevel resistance states, and such characteristics of the p-CuO/n-IZO diode could be utilized as the cell of OTP cross-point memory. The resistance-change properties of the p-CuO/n-IZO diode originated possibly from a back-to-back diode phenomenon by oxygen ion migration in the IZO thin film.
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)