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Charge trap memory characteristic of Ge2Sb2Te5 nano-islands with high-k blocking oxides
- Authors
- 박태주
- Issue Date
- Aug-2009
- Publisher
- Electrochemical Society, Inc.
- Citation
- Electrochemical and Solid-State Letters, pp 0 - 0
- Pages
- 1
- Indexed
- SCOPUS
- Journal Title
- Electrochemical and Solid-State Letters
- Start Page
- 0
- End Page
- 0
- ISSN
- 1099-0062
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- There are no files associated with this item.
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Related Researcher
- Park, Tae Joo
- ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)