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GaN LED의 웨이퍼 수준 EL 측정을 위한 전극 시뮬레이션
- Authors
- 신동수
- Issue Date
- 15-May-2009
- Publisher
- 한국광학회
- Citation
- 제16회 광전자 및 광통신 학술회의 논문집
- Journal Title
- 제16회 광전자 및 광통신 학술회의 논문집
- Abstract
- We examine the electrical probes for the wafer-level electroluminescence (EL) measurements of GaN light-emitting diodes. By using a simulator based on the 3-dimensional circuit analysis, we investigate various probe gaps and shapes to find the optimum probe parameters for an efficient wafer-level EL system.
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Related Researcher
- Shin, Dong Soo
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)