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High-current-density CuOx/ZnOx thin-film diodes for cross-point memory applications
- Authors
- Kang, Bo Soo; Ahn, Seung-Eon; Lee, Myoung-Jae; Stefanovich, Genrikh; Kim, Ki Hwan; Xianyu, Wen Xu; Lee, Chang Bum; Park, Youngsoo; Baek, In Gyu; Park, Bae Ho
- Issue Date
- Aug-2008
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- CURRENT-VOLTAGE CHARACTERISTICS; LOW-TEMPERATURE; OXIDE-FILMS; TRANSPARENT; RESISTANCE; FABRICATION
- Citation
- ADVANCED MATERIALS, v.20, no.16, pp 3066 - 3069
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED MATERIALS
- Volume
- 20
- Number
- 16
- Start Page
- 3066
- End Page
- 3069
- ISSN
- 0935-9648
1521-4095
- Abstract
- Room-temperature-deposited CuOx/InZnOx thin-film heteroJunction diodes show a high current density of 3.5 X 10(4) A cm(-2) and a high on/off current ratio of 10(6) (see figure). The oxide diode is a promising switch element for three-dimensional stackable memory devices, where high-temperature-prepared silicon diodes are difficult to apply.
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Related Researcher
- Kang, Bo Soo
- ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)