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Improved ESD voltage by inserting floating metal ring in GaN-based light emitting diodesopen access
- Authors
- Hwang, Sungwoo; Shim, Jong In
- Issue Date
- Apr-2008
- Publisher
- Institute of Electrical Engineers
- Keywords
- VERTICAL CHIP; LEDS
- Citation
- Electronics Letters, v.44, no.9, pp 590 - 591
- Pages
- 2
- Indexed
- SCIE
SCOPUS
- Journal Title
- Electronics Letters
- Volume
- 44
- Number
- 9
- Start Page
- 590
- End Page
- 591
- ISSN
- 0013-5194
1350-911X
- Abstract
- Improvement of the electrostatic discharge (ESD) voltage in an InGaN/GaN blue light emitting diode (LED) grown on sapphire substrate is presented by inserting floating metal near the n-electrode. ESD voltages about four times larger than previously observed are experimentally obtained for LEDs with floating metal compared to those without.
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Related Researcher
- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)