Strain relaxation in sol-gel grown epitaxial anatase thin films
- Authors
- Jung, Hyun Suk; Lee, Jung-Kun; Lee, Jaegab; Kang, Bo Soo; Jia, Quanxi; Nastasi, Michael
- Issue Date
- Mar-2008
- Publisher
- AMER CHEMICAL SOC
- Keywords
- TIO2 FILMS; LOW-COST; LAALO3; SUBSTRATE; MICROSTRUCTURE; MICROSCOPY; INTERFACES; DEPOSITION; STRESS; OXIDES
- Citation
- JOURNAL OF PHYSICAL CHEMISTRY C, v.112, no.11, pp.4205 - 4208
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICAL CHEMISTRY C
- Volume
- 112
- Number
- 11
- Start Page
- 4205
- End Page
- 4208
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42596
- DOI
- 10.1021/jp076194n
- ISSN
- 1932-7447
- Abstract
- Anatase TiO2 thin films on LaAlO3 (LAO) substrates were epitaxially grown at a temperature as low as 350 degrees C using a simple sol-gel process. X-ray diffraction and high-resolution transmission electron microscopy showed that the anatase films have the epitaxial relationship of (001)(TiO2)parallel to(001)(LaAlO3). While the low-temperature growth of the anatase film yielded a residual strain, subsequent annealing at higher temperatures can remove the strain and recover the lattice parameters of a perfect anatase crystal. Measurements of the oxygen content in the anatase films by non-Rutherford elastic resonance scattering analysis suggest that the strain relaxation during higher temperature annealing is due to the incorporation of oxygen and the concomitant annihilation of oxygen vacancies.
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles
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