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Write current reduction in transition metal oxide based resistance-change memory
- Authors
- Ahn, Seung-Eon; Lee, Myoung-Jae; Park, Youngsoo; Kang, Bo Soo; Lee, Chang Bum; Kim, Ki Hwan; Seo, Sunae; Suh, Dong-Seok; Kim, Dong-Chirl; Hur, Jihyun; Xianyu, Wenxu; Stefanovich, Genrikh; Yin, Hit. Axiang; Yoo, In-Kyeong; Lee, Jung-Hyun; Park, Jong-Bong; Baek, In-Gyu; Park, Bae Ho
- Issue Date
- Mar-2008
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- FILMS; PERMITTIVITY; POLARIZATION; SRTIO3; MRAM
- Citation
- ADVANCED MATERIALS, v.20, no.5, pp.924 - 928
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED MATERIALS
- Volume
- 20
- Number
- 5
- Start Page
- 924
- End Page
- 928
- ISSN
- 0935-9648
- Abstract
- A novel memory cell structure with a Pt/Ti-doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching resistance-change-based device, as shown in the figure. The write current decreases dramatically upon scaling to cell sizes smaller than 100 nm x 100 nm. High-density universal memory can be fabricated by combining this node element with a selective switch.
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)