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Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory
- Authors
- Lee, M. J.; Park, Y.; Ahn, S. E.; Kang, B. S.; Lee, C. B.; Kim, K. H.; Xianyu, W. X.; Yoo, I. K.; Lee, J. H.; Chung, S. J.; Kim, Y. H.; Lee, C. S.; Choi, K. N.; Chung, K. S.
- Issue Date
- Jan-2008
- Publisher
- AMER INST PHYSICS
- Keywords
- FILMS; PERMITTIVITY; POLARIZATION
- Citation
- JOURNAL OF APPLIED PHYSICS, v.103, no.1, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 103
- Number
- 1
- Start Page
- 1
- End Page
- 5
- ISSN
- 0021-8979
- Abstract
- In order to investigate the mechanism behind bistable resistance switching in NiO thin films, we have done detailed x-ray photon spectroscopy (XPS) and x-ray diffraction Analysis (XRD) on NiO and Ti doped NiO samples fabricated under various conditions. We discovered that a high initial resistivity was required for samples to undergo bistable resistance switching, and the presence of metallic Ni content in these samples was determined by XPS. XRD data also showed that NiO grown with a relative (200) orientation was preferred over those grown with relative (111) orientation. (c) 2008 American Institute of Physics.
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)