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Two series oxide resistors applicable to high speed and high density nonvolatile memory
- Authors
- Lee, Myoung-Jae; Park, Youngsoo; Suh, Dong-Seok; Lee, Eun-Hong; Seo, Sunae; Kim, Dong-Chirl; Jung, Ranju; Kang, Bo-Soo; Ahn, Seung-Eon; Lee, Chang Bum; Seo, David H.; Cha, Young-Kwan; Yoo, In-Kyeong; Kim, Jin-Soo; Park, Bae Ho
- Issue Date
- Nov-2007
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- METAL-INSULATOR-TRANSITION; THIN-FILMS; NIO FILMS
- Citation
- ADVANCED MATERIALS, v.19, no.22, pp.3919 - 3923
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED MATERIALS
- Volume
- 19
- Number
- 22
- Start Page
- 3919
- End Page
- 3923
- ISSN
- 0935-9648
- Abstract
- A memory cell consisting of a Pt/VO2/ Pt switch element and a Pt/NiO/Pt memory element connected in series. By applying a voltage higher than V-th of 0.6 V, the switch element reaches the on state and the cell can be accessed. Since reset and set voltages are higher than V-th, information can be written by simply applying an appropriate voltage to a selected cell. By applying a voltage lower than V-th to the other cells, we can keep the other cells in the off state and prevent interference between the selected cell and the others.
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)