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High-performance blue InGaN laser diodes with single-quantum-well active layers
- Authors
- Ryu, Hanyoul; Ha, Kyoungho; Lee, Sung-nam; Jang, Taehoon; Son, Joongkon; Paek, Hosun; Sung, Younjoon; Kim, Hyungkun; Kim, Kyusang; Nam, Okhyun; Park, Yongjo; Shim, Jongin
- Issue Date
- Nov-2007
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- blue laser; (In)GaN; laser diode (LD); single quantum well (QW)
- Citation
- IEEE Photonics Technology Letters, v.19, no.21-24, pp.1717 - 1719
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Photonics Technology Letters
- Volume
- 19
- Number
- 21-24
- Start Page
- 1717
- End Page
- 1719
- ISSN
- 1041-1135
- Abstract
- The authors report on the high-performance blue laser diodes (LDs) with an emission wavelength of similar to 448 mn employing InGaN single-quantum-well (QW) active layers. At 100-mW continuous-wave (CW) output power, operation current and voltage are, respectively, 150 mA and 5.3 V, corresponding to the wall plug efficiency of > 12%, a record value for the single-mode InGaN LDs with blue wavelengths. The single QW blue LD showed normal temperature dependence of light output-current curves with the characteristic temperature of 170 K. In addition, we demonstrate a high level of catastrophic optical damage of > 300 mW and long device lifetime under CW operation condition at room temperature.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)