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A new method for measurement of the fundamental device parameters in a GaN-based light emitting diode
- Authors
- Kim, Hyunsung; Shim, Jong In
- Issue Date
- Aug-2007
- Citation
- Optics InfoBase Conference Papers, pp. 1 - 2
- Indexed
- SCOPUS
- Journal Title
- Optics InfoBase Conference Papers
- Start Page
- 1
- End Page
- 2
- ISSN
- 2162-2701
- Abstract
- We propose a simple and new method which is able to characterize internal device parameters such as the internal quantum efficiency, nonradiative recombination rate, radiative recombination rate, and the internal carrier density in a light emitting diode. The method utilizes measurements of both the power versus current curve and the carrier lifetime. © 2011 OSA.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)