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A new method for measurement of the fundamental device parameters in a GaN-based light emitting diode
- Authors
- Kim, Hyunsung; Shim, Jong In
- Issue Date
- Aug-2007
- Publisher
- IEEE
- Citation
- Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, pp.979 - 980
- Indexed
- SCIE
SCOPUS
- Journal Title
- Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
- Start Page
- 979
- End Page
- 980
- Abstract
- We propose a simple and new method which is able to characterize internal device parameters such as the internal quantum efficiency, nonradiative recombination rate, radiative recombination rate, and the internal carrier density in a light emitting diode. The method utilizes measurements of both the power versus current curve and the carrier lifetime.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)