Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effect of wettability of poly silicon on CMP behavior
- Authors
- Kang, Young-Jae; Kang, Bong-Kyun; Kim, In-Kwon; Park, Jin-Goo; Hong, Yi-Koan; Han, Sang Yeob; Yun, Seong-Kyu; Yoon, Bo-Un; Hong, Chang-Ki
- Issue Date
- Dec-2007
- Publisher
- MATERIALS RESEARCH SOC
- Citation
- ADVANCES AND CHALLENGES IN CHEMICAL MECHANICAL PLANARIZATION, v.991, pp.275 - 280
- Indexed
- SCIE
- Volume
- 991
- Start Page
- 275
- End Page
- 280
- ISSN
- 0272-9172
- Abstract
- The hydrophobicity of poly Si is reported to introduce different polishing behavior with careful control of post CMP cleaning process. The purpose of this study was to investigate the effect of poly Si wettability on its CMP behavior. The adhesion force of polymeric particle on the poly Si wafer surfaces was measured in the KOH solution (pH 11) as a function of solution A concentration. Adhesion force decreased and saturated as a function of concentration of solution A. The change of surface wettability affects not only the polishing rates but also the level of contamination on wafer because the interactions between particles and substrates are dependent on the wettability of the surface. Also, hydrophobic poly Si surfaces attracted much more pad particles with water marks than hydrophilic.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Park, Jin Goo
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)