AlN 체적탄성파 소자의 주파수 응답특성에 대한 전극재료의 영향

Abstract

Air-gap형 구조의 체적탄성파 소자 제작시 중간지지층을 별도로 요구하지 않는 새로운 공정방법을 제안하였고, 상부 및 하부전극의 다양한 금속재료에 따른 주파수 응답 특성의 변화를 비교, 분석함.

Film bulk acoustic resonator (FBAR) devices which adopt an air-gap type (metai/AlN/metal/air/substrate) configuration are fabricated by a novel process. The newly fabricated resonator doesn't employ any supporting layer below it. FBAR devices with the air-gap type are also fabricated using the conventional method. The frequency response characteristics of all the devices fabricated are measured and compared, in terms of the kinds of top and bottom electrode materials. The results show that the better device performance of FBAR devices can be achieved by employing the proposed process.