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Ohmic contacts of Pd/Zn/M(= Pd or Pt)/Au to p-type InP
- Authors
- Hwang, Sungmin; Shim, Jongin; Eo, Yungseon
- Issue Date
- Apr-2005
- Publisher
- 한국물리학회
- Keywords
- ohmic contact; p-InP; Au/Pt/Zn/Pd/p-InP; Au/Cr/AuZn/Au/p-InP
- Citation
- Journal of the Korean Physical Society, v.46, no.4, pp 751 - 755
- Pages
- 5
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 46
- Number
- 4
- Start Page
- 751
- End Page
- 755
- ISSN
- 0374-4884
1976-8524
- Abstract
- We have investigated the ohmic properties of Au/M(= Pd or Pt)/Zn/Pd/p-InP, focusing on the role of the third metal M in Au-free metallization. Both the lowest specific contact resistivity of 7 x 10(-6) Omega(.)cm(2) and a flat diffusion front were obtained for a sample with a Au/Pt/Zn/Pd/p-InP contact material after annealing at 400 degrees C for 4 min, indicating that the Pt layer was more effective than the Pd layer in preventing Zn out-diffusion during the annealing process. In addition to Au-free metallizations, we fabricated the Au-based metallization of Au/Cr/AuZn/Au/p-lnP in order to justify our ohmic contact process, and we compared its ohmic characteristics.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)