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Charge retention loss and its mechanism of (Bi,La)(4)Ti3O12 capacitors
- Authors
- Kim, DJ; Jo, JY; So, YW; Kang, BS; Noh, TW; Yoon, JG; Song, TK; Noh, KH; Lee, SS; Oh, SH; Hong, SK; Park, YJ
- Issue Date
- 2004
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- ferroelectric; BLT; retention; imprint; polarization relaxation
- Citation
- INTEGRATED FERROELECTRICS, v.67, pp.85 - 91
- Indexed
- SCIE
SCOPUS
- Journal Title
- INTEGRATED FERROELECTRICS
- Volume
- 67
- Start Page
- 85
- End Page
- 91
- ISSN
- 1058-4587
- Abstract
- We investigated the retention properties of BLT capacitors fabricated by a chemical solution deposition with Pt electrodes. BLT capacitors showed an opposite-state retention loss much better than that of PZT capacitor. On the other hand, BLT capacitors showed a large polarization loss of the same-state retention within I hour baking, while the corresponding loss of PZT was negligible. The hysteresis loops after different baking time showed a negligible imprint and a large relaxation of polarization. These behaviors were explained by a high resistance against imprint and a polarization relaxation possibly due to damaged interfacial layers developed by etching process of the BLT capacitors.
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)