Dynamical aspects of retention and its relation to fatigue in ferroelectric thin films
- Authors
- Kang, BS; Yoon, JG; Song, TK; Seo, S; So, YW; Noh, TW
- Issue Date
- Nov-2002
- Publisher
- INST PURE APPLIED PHYSICS
- Keywords
- ferroelectric; thin film; memory; retention; PZT; depolarization; relaxation
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.41, no.11B, pp.6836 - 6839
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
- Volume
- 41
- Number
- 11B
- Start Page
- 6836
- End Page
- 6839
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46776
- DOI
- 10.1143/JJAP.41.6836
- ISSN
- 0021-4922
- Abstract
- Short-time retention loss behaviors were investigated for fatigued Pt/PbZr0.4Ti0.6O3/Pt capacitors. In the short-time regime of t < 1 s, fatigued capacitors showed a significant loss in retained polarization. The short-time retention loss behavior was well described by a power-law function and the retention characteristic got worse as the fatigue stress increased. The retention loss was analyzed in a viewpoint of polarization dynamics, superpositions of Debye-type polarization relaxations. Distribution of the relaxation time was affected by the degree of fatigue stress and write/read pulse-field strength. The results were explained in terms of the depolarization field. [DOI: 10.1143/JJAP.41.6836]
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