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Dynamical aspects of retention and its relation to fatigue in ferroelectric thin films

Authors
Kang, BSYoon, JGSong, TKSeo, SSo, YWNoh, TW
Issue Date
Nov-2002
Publisher
INST PURE APPLIED PHYSICS
Keywords
ferroelectric; thin film; memory; retention; PZT; depolarization; relaxation
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.41, no.11B, pp.6836 - 6839
Indexed
SCIE
SCOPUS
Journal Title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume
41
Number
11B
Start Page
6836
End Page
6839
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46776
DOI
10.1143/JJAP.41.6836
ISSN
0021-4922
Abstract
Short-time retention loss behaviors were investigated for fatigued Pt/PbZr0.4Ti0.6O3/Pt capacitors. In the short-time regime of t < 1 s, fatigued capacitors showed a significant loss in retained polarization. The short-time retention loss behavior was well described by a power-law function and the retention characteristic got worse as the fatigue stress increased. The retention loss was analyzed in a viewpoint of polarization dynamics, superpositions of Debye-type polarization relaxations. Distribution of the relaxation time was affected by the degree of fatigue stress and write/read pulse-field strength. The results were explained in terms of the depolarization field. [DOI: 10.1143/JJAP.41.6836]
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