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Hydrogen-induced degradation in ferroelectric Bi3.25La0.75Ti3O12
- Authors
- Seo, S; Yoon, JG; Kim, JD; Song, TK; Kang, BS; Noh, TW; Lee, YK; Kim, CJ; Lee, IS; Lee, JK; Park, YS
- Issue Date
- Sep-2002
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.81, no.10, pp.1857 - 1859
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 81
- Number
- 10
- Start Page
- 1857
- End Page
- 1859
- ISSN
- 0003-6951
- Abstract
- Effects of forming gas annealing (FGA) were investigated on ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films fabricated by a chemical solution deposition. With the FGA up to 350 degreesC, the Pt/BLT/Pt capacitors showed good ferroelectric characteristics without significant degradation. As the FGA temperature was increased, a decomposition of the BLT powder sample was observed by using thermogravimetric analysis. By comparing the time-dependent weight loss of BLT with that of Bi4Ti3O12 during FGA, La doping was found to significantly impede the decomposition rate. The decomposition, especially in the (Bi2O2)(2+) layers, was discussed as a hydrogen-induced degradation mechanism in the Bi-layered perovskite ferroelectrics. (C) 2002 American Institute of Physics.
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)