Enhanced PbS quantum dot loading on TiO2 photoanode using atomic-layer-deposited ZnS interfacial layer for quantum dot-sensitized solar cells
- Authors
- Basit, Muhammad Abdul; Abbas, Muhammad Awais; Jung, Eun Sun; Ali, Ijaz; Kim, Dae Woong; Bang, Jin Ho; Park, Tae Joo
- Issue Date
- Dec-2018
- Publisher
- Elsevier BV
- Keywords
- QDSSCs; Atomic layer deposition; Zinc sulfide; Interfacial layer; Quantum dots loading
- Citation
- Materials Chemistry and Physics, v.220, pp.293 - 298
- Indexed
- SCIE
SCOPUS
- Journal Title
- Materials Chemistry and Physics
- Volume
- 220
- Start Page
- 293
- End Page
- 298
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/4723
- DOI
- 10.1016/j.matchemphys.2018.09.006
- ISSN
- 0254-0584
- Abstract
- Ultrathin and conformal ZnS film grown by atomic layer deposition was employed in quantum dot-sensitized solar cells (QDSSCs) as an interfacial layer (IL) between mesoporous TiO2 photoanode and successive ionic layer adsorption and reaction (SILAR)-grown PbS QDs. ZnS IL provided more nucleation sites compared to a bare TiO2 photoanode, which enhanced PbS QDs loading remarkably. As a result, the optical absorbance and thus photocurrent density considerably increased. The power conversion efficiency of QDSSCs increased from 3.4% to 4% by introducing the ZnS IL. However, the beta-recombination model obtained from electrochemical impedance spectroscopy revealed the evolution of charge carrier recombination inside QDs as a consequence of enhanced QD loading, which partly dilutes this benefit.
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Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF CHEMICAL AND MOLECULAR ENGINEERING > 1. Journal Articles
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