Effects of Ar Addition to O-2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films
- Authors
- Jung, Hanearl; Oh, Il-Kwon; Yoon, Chang Mo; Park, Bo-Eun; Lee, Sanghun; Kwon, Ohyung; Lee, Woo Jae; Kwon, Se-Hun; Kim, Woo-Hee; Kim, Hyungjun
- Issue Date
- Nov-2018
- Publisher
- American Chemical Society
- Keywords
- atomic layer deposition; O-2/Ar plasma; oxide thin films; enhanced growth rates; high-energy electron temperature; increased plasma density
- Citation
- ACS Applied Materials and Interfaces, v.10, no.46, pp.40286 - 40293
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS Applied Materials and Interfaces
- Volume
- 10
- Number
- 46
- Start Page
- 40286
- End Page
- 40293
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/5108
- DOI
- 10.1021/acsami.8b14244
- ISSN
- 1944-8244
- Abstract
- A method for significantly increasing the growth rates (GRs) of high-k oxide thin films grown via plasma enhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O-2 plasma oxidant was developed. This approach led to improvements of, similar to 60% in the saturation GRs of PE-ALD ZrO2, HfO2, and SiO2. Furthermore, despite the significantly higher GR enabled by PE-ALD, the mechanical and dielectric properties of the PE-ALD oxide films were similar or even superior to those of films grown via the conventional O-2 plasma process. Optical emission spectroscopy analyses in conjunction with theoretical calculation of the electron energy distribution function revealed that adding Ar gas to the O-2 plasma increased the density of high-energy electrons, thereby generating more O-2 plasma species, such as ions and radicals, which played a key role in improving the GRs and the properties of the films. This promising approach is expected to facilitate the high-volume manufacturing of films via PE-ALD, especially for use as gate insulators in thin-film transistor-based devices in the display industry.
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Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
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