Atomic layer deposited strontium niobate thin films as new high-k dielectrics
- Authors
- Lee, Seung Won; Kim, Hyo Bae; Kim, Chang Min; Kwon, Se Hun; Ahn, Ji-Hoon
- Issue Date
- Mar-2021
- Publisher
- Elsevier BV
- Keywords
- Atomic layer deposition; High-k dielectrics; Strontium niobate; Super-cycle; Thin film
- Citation
- Materials Letters, v.286, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Materials Letters
- Volume
- 286
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/658
- DOI
- 10.1016/j.matlet.2020.129220
- ISSN
- 0167-577X
- Abstract
- Strontium niobate thin films have potential for next-generation high-k dielectric applications. In this work, we investigated the fabrication of SrxNb1-xOy thin films by atomic layer deposition for the first time and examined their physical and electrical characteristics. The composition of the SrxNb1-xOy thin film could be effectively controlled by introducing a super-cycle, and it was confirmed that the crystallinity after annealing varied depending on the composition. The Sr-rich film was crystalline after annealing and showed a high dielectric constant of approximately 75. In addition, it was observed that the Nb-rich film had a relatively large dielectric constant of approximately 65 even though it was amorphous, confirming that it could be applied as a next-generation high-k material. This research is the first step toward a new high-k dielectric candidate, which we believe can be applied to next-generation semiconductor devices through further research to improve the characteristics. © 2020 Elsevier B.V.
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