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A study on degradation mechanism of flexible a-InGaZnO thin film transistor under repetitive bending stress using simulation
- Issue Date
- Dec-2018
- Publisher
- International Display Workshops
- Keywords
- Bending stress; Flexible device; Oxide TFT
- Citation
- Proceedings of the International Display Workshops, IDW 2018, v.1, pp 330 - 333
- Pages
- 4
- Indexed
- SCOPUS
- Volume
- 1
- Start Page
- 330
- End Page
- 333
- ISSN
- 1883-2490
- Abstract
- We examined the degradation mechanism of the oxide TFT under repetitive bending stress. As the bending cycle accumulated, the transfer characteristics of the TFTs are degraded. We tried to interpret the cause of degradation by mapping the stress distribution under bending situation using simulation program. © 2018 International Display Workshops. All rights reserved.
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