Adsorption of sodium dodecyl sulfate on cleaning of an N-polar GaN surface in an alkaline solution
- Authors
- Kim, Min-Su; Paluvai, Nagarjuna Reddy; Kim, Hyun-Tae; Park, Jin-Goo
- Issue Date
- Aug-2017
- Publisher
- Elsevier BV
- Keywords
- N-polar GaN surface; Wafer bonding; Particle removal efficiency (PRE); Surface roughness; Sodium dodecyl sulfate (SDS)
- Citation
- Materials Science & Engineering B: Solid-State Materials for Advanced Technology, v.222, pp 1 - 6
- Pages
- 6
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Materials Science & Engineering B: Solid-State Materials for Advanced Technology
- Volume
- 222
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/9098
- DOI
- 10.1016/j.mseb.2017.04.003
- ISSN
- 0921-5107
1873-4944
- Abstract
- The present study investigated the removal of contaminated particles from a polished N-polar GaN surface using an alkaline cleaning solution along with sodium dodecyl sulfate (SDS) surfactant. The zeta potential, etch rate, and particle removal efficiency (PRE) of N-polar GaN surfaces were reported. A lower etch rate and smoother N-polar GaN surface were obtained when the surface is treated with a diluted NH4OH solution. However, the etch rate and PRE of the N-polar GaN surface increased as a function of the pH of the NH4OH solution. The PRE of the N-polar GaN surface reached to 96% at pH 10 with a high surface roughness of 0.5 nm. SDS was added to the ammonia solutions to control the surface roughness. The N-polar GaN surface reached 100% PRE and surface roughness shown less than 0.4 nm when cleaned in a diluted NH4OH solution with 5 mM SDS surfactant in a megasonic bath. (C) 2017 Elsevier B.V. All rights reserved.
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