Novel field-effect passivation for nanostructured Si solar cells using interfacial sulfur incorporation
- Authors
- Kim, Dae Woong; Song, Jae-Won; Park, Young Min; Lee, Jung-Ho; Park, Tae Joo
- Issue Date
- May-2017
- Publisher
- John Wiley & Sons Inc.
- Keywords
- nanostructured Si solar cells; field-effect passivation; sulfur passivation; Al2O3; atomic layer deposition
- Citation
- Progress in Photovoltaics: Research and Applications, v.25, no.5, pp.376 - 383
- Indexed
- SCIE
SCOPUS
- Journal Title
- Progress in Photovoltaics: Research and Applications
- Volume
- 25
- Number
- 5
- Start Page
- 376
- End Page
- 383
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/9638
- DOI
- 10.1002/pip.2873
- ISSN
- 1062-7995
- Abstract
- Surface passivation of a nanostructured Si solar cells plays a crucial role in collecting photogenerated carriers by mitigating carrier recombination at surface defect sites. Interface modification by additional sulfur (S) incorporation is proposed to enhance the field-effect passivation performance. Here, we report that simple annealing in a H2S ambient induced additional negative fixed charges at the interface between atomic-layer-deposited Al2O3 and nanostructured Si. Annealing at various temperatures allowed us to control the S concentration and the fixed charge density. The optimized S incorporation at the interface significantly enhanced the negative fixed charge density and the minority carrier lifetime up to similar to 5.9x10(12)cm(-2) and similar to 780s, respectively. As a result, the internal quantum efficiency was nearly two times higher in the blue response region than that of control cells without S incorporation. Copyright (C) 2017 John Wiley & Sons, Ltd.
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