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Novel field-effect passivation for nanostructured Si solar cells using interfacial sulfur incorporation

Authors
Kim, Dae WoongSong, Jae-WonPark, Young MinLee, Jung-HoPark, Tae Joo
Issue Date
May-2017
Publisher
John Wiley & Sons Inc.
Keywords
nanostructured Si solar cells; field-effect passivation; sulfur passivation; Al2O3; atomic layer deposition
Citation
Progress in Photovoltaics: Research and Applications, v.25, no.5, pp.376 - 383
Indexed
SCIE
SCOPUS
Journal Title
Progress in Photovoltaics: Research and Applications
Volume
25
Number
5
Start Page
376
End Page
383
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/9638
DOI
10.1002/pip.2873
ISSN
1062-7995
Abstract
Surface passivation of a nanostructured Si solar cells plays a crucial role in collecting photogenerated carriers by mitigating carrier recombination at surface defect sites. Interface modification by additional sulfur (S) incorporation is proposed to enhance the field-effect passivation performance. Here, we report that simple annealing in a H2S ambient induced additional negative fixed charges at the interface between atomic-layer-deposited Al2O3 and nanostructured Si. Annealing at various temperatures allowed us to control the S concentration and the fixed charge density. The optimized S incorporation at the interface significantly enhanced the negative fixed charge density and the minority carrier lifetime up to similar to 5.9x10(12)cm(-2) and similar to 780s, respectively. As a result, the internal quantum efficiency was nearly two times higher in the blue response region than that of control cells without S incorporation. Copyright (C) 2017 John Wiley & Sons, Ltd.
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Lee, Jung-Ho
ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
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