Heteromaterial Gate Tunneling Field-Effect Transistor for High-Speed and Radio-Frequency Applications
- Authors
- Yoon, Young Jun; Seo, Jae Hwa; Cho, Eou-Sik; Lee, Jung-Hee; Bae, Jin-Hyuk; Cho, Seongjae; Kang, In Man
- Issue Date
- Nov-2014
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Tunneling Field-Effect Transistor; Low Standby Power; Radio-Frequency; Heteromaterial Gate; High-Speed
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.11, pp.8136 - 8140
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 14
- Number
- 11
- Start Page
- 8136
- End Page
- 8140
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/12145
- DOI
- 10.1166/jnn.2014.9882
- ISSN
- 1533-4880
- Abstract
- We propose a tunneling field-effect transistor (TFET) with a heteromaterial (HM)-gate not only for low standby power (LSTP) applications, which TFETs are genuinely suitable for, but also for highspeed performance by properly adjusting intrinsic gate capacitance (C-gg). As a result of simulations in this work, the HM-gate TFET showed better subthreshold characteristics (smaller S) at an appropriate threshold voltage (V-th) for LSTP applications, enhancing tunneling probability by modulating the difference in the metal workfunction (phi(m)) between the source-side gate (S-gate) and the drain-side gate (D-gate). Further, the C-gg of HM-gate TFET were extracted and compared against that of conventional TFETs having gates with various phi(m)'s. Since lower C-gg can be formed by high phi(m) in the D-gate, the HM-gate TFET has an excellent cut-off frequency (f(T)) and intrinsic delay time (tau) associated with the C-gg. We confirmed that the HM-gate TFET proposed in this work achieves superb performance for LSTP applications as well as high-frequency operations.
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