Design of a recessed-gate GaN-based MOSFET using a dual gate dielectric for high-power applications
- Authors
- Yoon, Young Jun; Kang, Hee-Sung; Seo, Jae Hwa; Kim, Young-Jo; Bae, Jin-Hyuk; Lee, Jung-Hee; Kang, In Man; Cho, Eou-Sik; Cho, Seongjae
- Issue Date
- Nov-2014
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Gallium nitride; Metal-oxide-semiconductor field-effect transistor; Normally-off; Recessed-gate; High-k dielectric
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.65, no.10, pp.1579 - 1584
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 65
- Number
- 10
- Start Page
- 1579
- End Page
- 1584
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/12171
- DOI
- 10.3938/jkps.65.1579
- ISSN
- 0374-4884
- Abstract
- We have investigated gallium-nitride (GaN)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) having a recessed-gate structure for high-power applications. Recessed-gate GaN-based MOSFETs have been designed with a dual high-k dielectric structure to overcome low current drivability. Compared to recessed-gate GaN-based MOSFETs having a single gate dielectric with the same oxide thickness, recessed-gate GaN-based MOSFETs having a dual high-k dielectric composed of Al2O3 and HfO2 have achieved a high drain current (I (D) ) and transconductance (g (m) ) due to the high dielectric constant of HfO2. Also, because the dual high-k dielectric forms a high electron density in the channel layer with outstanding gate control capability, low channel resistances (R (ch) ) have obtained. In addition, we have studied the effect of the length between the gate and the drain (L (gd) ) on the on-resistance (R (on) ) to minimize the R (on) that is associated with power consumption and switching performance. Also, the electric field distribution of a device having a dual high-k dielectric has been examined with a field plate structure for high drive voltage. The proposed device was confirmed to be a remarkable candidate for switching devices in high-power applications.
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