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Analysis of radio frequency performance on GaAs/InGaAs heterojunction tunneling field-effect transistor which applicable for green energy system applications
- Authors
- Yoon, Y.J.; Seo, J.H.; Lee, H.G.; Yoo, G.M.; Kim, Y.J.; Kim, S.Y.; Woo, S.Y.; Roh, H.B.; Eun, H.R.; Kang, H.S.; Cho, S.; Cho, E.-S.; Bae, J.-H.; Lee, J.-H.; Kang, I.M.
- Issue Date
- 2014
- Publisher
- IEEE Computer Society
- Keywords
- Cut-off Frequency; Device simulator; Heterojunction Structure; Radio Frequency; Subthreshold swing; Tunneling Field-Effect Transistor
- Citation
- Proceedings - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014, pp.95 - 98
- Journal Title
- Proceedings - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014
- Start Page
- 95
- End Page
- 98
- ISSN
- 0000-0000
- Abstract
- We have proposed a tunneling field-effect transistor (TFET) having a GaAs/InGaAs heterojunction structure for radio frequency (RF) application. The GaAs/InGaAs heterojunction TFETs are investigated in terms of DC and RF characteristics by using the device simulation technology. The proposed TFET showed excellent subthreshold swing (S) and on/off current ratio as low standby power (LSTP) devices. Moreover, the superb RF performances of proposed TFET were obtained by designing drain doping (D Drain ). It was confirmed that the GaAs/InGaAs heterojunction TFET is suitable for RF applications. © 2014 IEEE.
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)