InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 V
- Authors
- Kim, Kyung Rok; Yoon, Young Jun; Cho, Seongjae; Seo, Jae Hwa; Lee, Jung-Hee; Bae, Jin-Hyuk; Cho, Eou-Sik; Kang, In Man
- Issue Date
- Nov-2013
- Publisher
- ELSEVIER
- Keywords
- Heterojunction; Tunneling field-effect transistor; Subthreshold swing; Current ratio; Low operating power; High speed
- Citation
- CURRENT APPLIED PHYSICS, v.13, no.9, pp.2051 - 2054
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 13
- Number
- 9
- Start Page
- 2051
- End Page
- 2054
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/14159
- DOI
- 10.1016/j.cap.2013.08.013
- ISSN
- 1567-1739
- Abstract
- An In0.53Ga0.47As/InP heterojunction-channel tunneling field-effect transistor (TFET) with enhanced subthreshold swing (S) and on/off current ratio (I-on/I-off) is studied. The proposed TFET achieves remarkable characteristics including S of 16.5 mV/dec, on-state current (I-on) of 421 mu A/mu m, I-on/I-off of 1.2 x 10(12) by design optimization in doping type of In0.53Ga0.47As channel at low gate (VGS) and drain voltages (V-GS) of 0.5 V. Comparable performances are maintained at V-DS below 0.5 V. Moreover, an extremely fast switching below 100 fs is accomplished by the device. It is confirmed that the proposed TFET has strong potentials for the ultra-low operating power and high-speed electron device. (C) 2013 Elsevier B.V. All rights reserved.
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