A Study on the Formation of 2-Dimensional Tungsten Disulfide Thin Films on Sapphire Substrate by Sputtering and High Temperature Rapid Thermal Processing
- Authors
- Nam, Hanyeob; Kim, Hong-Seok; Han, Jae-Hee; Kwon, Sang Jik; Cho, Eou Sik
- Issue Date
- Sep-2018
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Tungsten Disulfide (WS2); Sapphire Substrate; Sputtering; Rapid Thermal Processing (RTP)
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.18, no.9, pp.6257 - 6264
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 18
- Number
- 9
- Start Page
- 6257
- End Page
- 6264
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/3355
- DOI
- 10.1166/jnn.2018.15649
- ISSN
- 1533-4880
- Abstract
- As direct formation of p-type two-dimensional transition metal dichalcogenides (TMDC) films on substrates, tungsten disulfide (WS2) thin films were deposited onto sapphire glass substrate through shadow mask patterns by radio-frequency (RF) sputtering at different sputtering powers ranging from 60 W to 150 W and annealed by rapid thermal processing (RTP) at various high temperatures ranging from 500 degrees C to 800 degrees C. Based on scanning electron microscope (SEM) images and Raman spectra, better surface roughness and mode dominant E-2g(1) and A(g)(1) peaks were found for WS2 thin films prepared at higher RF sputtering powers. It was also possible to obtain high mobilities and carrier densities for all WS2 thin films based on results of Hall measurements. Process conditions for these WS2 thin films on sapphire substrate were optimized to low RF sputtering power and high temperature annealing.
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Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
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