Direct Formation of 2-dimensional Molybdenum Disulfide Thin Films by RF Sputtering and Rapid Thermal Annealing on Sapphire Substrate
- Authors
- Yin, Min Yu; Kwon, Sang Jik; Cho, Eou-Sik
- Issue Date
- Apr-2018
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Molybdenum disulfide (MoS2); RF sputtering; rapid thermal annealing (RTA); sapphire substrate
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.18, no.2, pp.153 - 159
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 18
- Number
- 2
- Start Page
- 153
- End Page
- 159
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/3914
- DOI
- 10.5573/JSTS.2018.18.2.153
- ISSN
- 1598-1657
- Abstract
- For the realization of well-patterned two-dimensional transition metal dichalcogenide (TMDC) films, molybdenum disulfide (MoS2) films were formed on sapphire substrate by radio-frequency (RF) sputtering with a shadow mask followed by rapid thermal annealing (RTA). The films were deposited using various sputtering power and annealed at different temperatures of 600 to 800 degrees C. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) indicate more noticeable peaks when higher RF power and annealing temperature are used. However, analyses with a scanning electron microscope (SEM) and atomic force microscope (AFM) show that the MoS2 films sputtered at lower RF sputtering power have a better surface as a result of the different coefficients of thermal expansion (CTEs). The high mobility and carrier density were also investigated for all the MoS2 films.
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Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
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