Chemical Doping Effects on CVD-Grown Multilayer MoSe2 Transistor
- Authors
- Yoo, Hocheon; Hong, Seongin; Moon, Hyunseong; On, Sungmin; Ahn, Hyungju; Lee, Han-Koo; Kim, Sunkook; Hong, Young Ki; Kim, Jae-Joon
- Issue Date
- Jun-2018
- Publisher
- WILEY
- Keywords
- chemical doping; hybrid devices; MoSe2; multilayer transition metal dichalcogenides (TMDs); phototransistors
- Citation
- ADVANCED ELECTRONIC MATERIALS, v.4, no.6
- Journal Title
- ADVANCED ELECTRONIC MATERIALS
- Volume
- 4
- Number
- 6
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78636
- DOI
- 10.1002/aelm.201700639
- ISSN
- 2199-160X
- Abstract
- Multilayer transition metal dichalcogenides (TMDs) potentially provide opportunities for large-area electronics, including flexible displays and wearable sensors. However, most TMDs suffer from a Schottky barrier (SB) and nonuniform defects, which severely limit their electrical performances. Here, a novel chemical doping scheme is presented using poly-(diketopyrrolopyrrole-terthiophene) (PDPP3T) to compensate the defects and SB of multilayer molybdenum diselenide (MoSe2), exhibiting greatly enhanced electrical characteristics, including on-current (approximate to 2000-fold higher) and photoresponsivity (approximate to 10-fold larger) over the baseline MoSe2 device. Based on comprehensive analysis using X-ray photoelectron spectroscopy, grazing incidence wide-angle X-ray diffraction, atomic force microscopy, and near-edge X-ray absorption of fine structure, it is shown that two mechanisms (dipole-induced and charge-transfer doping effects) account for such enhancements in the multilayer MoSe2 device. The methodical generality of the strong n-doping behavior of multilayer MoSe2 is further demonstrated by applying thiophene instead of PDPP3T.
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