Detailed Information
Cited 5 time in 
Cited 2 time in 
Cited 2 time in
Metadata Downloads
Nd:YVO4 Laser Direct Patterning of Aluminum-Doped Zinc Oxide Films Sputtered Under Different Process Conditions
- Authors
- Heo, Jaeseok; Kwon, Sang Jik; Cho, Eou Sik
- Issue Date
- Sep-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Aluminum-Doped Zinc Oxide (AZO); Laser Ablation; Sputtering Power; Grain Size
- Citation
- SCIENCE OF ADVANCED MATERIALS, v.8, no.9, pp.1783 - 1789
- Journal Title
- SCIENCE OF ADVANCED MATERIALS
- Volume
- 8
- Number
- 9
- Start Page
- 1783
- End Page
- 1789
- ISSN
- 1947-2935
- Abstract
- To examine the application of aluminum-doped zinc oxide (AZO) to photovoltaic devices, a study on the direct ablation of AZO deposited at different pulsed-DC sputtering powers has been performed with a Q-switched diode-pumped neodymium-doped yttrium vanadate (Nd:YVO4, lambda = 1064 nm) laser. From the laser-ablated results, it was possible to obtain a lower ablation threshold and more easily etched patterns on AZO deposited at 1 kW than on AZO deposited at 3 kW. The different ablation results show that the heating and subsequent thermal effects by Nd:YVO4 laser with a wavelength of 1064 nm are influenced by the atomic percentage of Zn and Al, the crystallinity, and the grain size of AZO films caused by the sputtering power.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.