Exceptionally linear and highly sensitive photo-induced unipolar inverter device
- Authors
- Naqi, M.; Lee, Ji Ye; Lee, Byeong Hyeon; Kim, Sunkook; Lee, Sang Yeol; Yoo, Hocheon
- Issue Date
- Jan-2021
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- amorphous silicon indium zinc oxide (a-SIZO); Electrodes; Field effect transistors; field-effect transistor (FET); Inverters; Logic gates; Optical variables measurement; photo-induced inverter.; phototransistor; Phototransistors; Semiconductor device measurement; Unipolar inverter
- Citation
- IEEE Journal of the Electron Devices Society, v.9, pp.180 - 186
- Journal Title
- IEEE Journal of the Electron Devices Society
- Volume
- 9
- Start Page
- 180
- End Page
- 186
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/80469
- DOI
- 10.1109/JEDS.2020.3048725
- ISSN
- 2168-6734
- Abstract
- Oxide semiconductors are of particular interest in the field of integrated electronics due to their large-area fabrication, high uniformity, and superior performance. Here, we report an exceptionally sensitive photo-induced inverter device with high linearity based on the unipolar n-type channel material amorphous silicon indium zinc oxide (a-SIZO). The field-effect transistor (FET) based on a-SIZO exhibits maximum mobility of 9.8 cm2/Vs at VD of 5 V, high on/off ratio of 106, and stable threshold voltage (VTh) of -0.35 V. Additionally, the optical properties of the proposed FET include excellent VTh shift and photocurrent (Iphoto) with high linearity under various red-light illumination. The proposed enhancement-load type inverter device shows reliable electrical and optical characteristics with an inverter gain of 0.7 at VDD of 1 V and linear photo-response in terms of inverter gain and voltage shift, demonstrating promising potential in the field of integrated electronics for optoelectronic applications. CCBY
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