Robust molybdenum diselenide ambipolar transistors with fluoropolymer interfacial layer and their application to complementary inverter circuits
- Authors
- Hong, Seongin; Yoo, Hocheon
- Issue Date
- Jul-2021
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- 2D materials; Bias stress; MoSe2 inverter; Temperature stress; Transition-metal dichalcogenides
- Citation
- Journal of Alloys and Compounds, v.868
- Journal Title
- Journal of Alloys and Compounds
- Volume
- 868
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/81498
- DOI
- 10.1016/j.jallcom.2021.159212
- ISSN
- 0925-8388
- Abstract
- Recently, two-dimensional (2D) transition-metal dichalcogenides (TMDs) have been extensively studied as promising semiconducting materials for complementary metal–oxide semiconductor (CMOS) technology because their family includes p- and n-type semiconductors with excellent electrical properties. However, systematic stability tests and robustness enhancement methods for TMD field-effect transistors (FETs) for implementing high-reliability 2D-material CMOS technology have not been reported. Herein, we report MoSe2 FETs with well-balanced ambipolar charge-transport properties and high stability arising from the p-type doping effect and the minimization of charge trapping, which were due to the insertion of a fluoropolymer (Cytop) interfacial layer at the MoSe2/SiO2 interface. Ambipolar MoSe2 FETs with a Cytop interfacial layer are systematically examined via harsh stress tests to evaluate their stability. Additionally, we demonstrate a 2D-material CMOS inverter based on ambipolar MoSe2 FETs with Cytop, which exhibits high performance and excellent stability, such as a full logic swing and robust retention characteristics without degradation for 5000 cycles. This study suggests a novel strategy for developing 2D-material CMOS circuits with high performance and stability. © 2021 Elsevier B.V.
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