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SCISCIESCOPUS
A review on the recent developments of solution processes for oxide thin film transistorsGo to Link

Ahn, Byung Du; Jeon, Hye-Ji; Sheng, Jiazhen; Park, Jozeph; Park, Jin-Seong

ArticleIssue Date2015CitationSemiconductor Science and Technology, v.30, no.6, pp 1 - 16PublisherInstitute of Physics Publishing
SCISCIESCOPUS
Device instability of postannealed TiOx thin-film transistors under gate bias stressesGo to Link

Ahn, Byung Du; Ok, Kyung-Chul; Park, Jin-Seong; Chung, Kwun-Bum

ArticleIssue Date2013CitationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.31, no.2, pp 1 - 5PublisherAmerican Institute of Physics
SCISCIESCOPUS
Effect of processing temperature on the structural, electronic and electrical properties of solution-processed amorphous Ge-In-Sn-O thin-film transistorsGo to Link

Lim, Jun Hyung; Choi, Jun Hyuk; Lee, Seung Muk; Ahn, Byung Du; Chung, Kwun-Bum; Park, Jin-Seong; Hwang, Soo Min; Joo, Jinho

ArticleIssue Date2014CitationJournal of Physics D: Applied Physics, v.47, no.8, pp 1 - 7PublisherIOP Publishing Ltd.
SCISCIESCOPUS
Effects of Ga:N Addition on the Electrical Performance of Zinc Tin Oxide Thin Film Transistor by Solution-ProcessingGo to Link

Ahn, Byung Du; Jeon, Hye Ji; Park, Jin-Seong

ArticleIssue Date2014CitationACS Applied Materials & Interfaces, v.6, no.12, pp 9228 - 9235PublisherAmerican Chemical Society
SCISCIESCOPUS
Electrical stability enhancement of GeInGaO thin-film transistors by solution-processed Li-doped yttrium oxide passivationGo to Link

Choi, Uy Hyun; Yoon, Sungyeol; Yoon, Doo Hyun; Tak, Young Jun; Kim, Yeong Gyu; Ahn, Byung Du; Park, Jin Seong; Kim, Hyun Jae

ArticleIssue Date2016CitationJournal of Physics D: Applied Physics, v.49, no.28, pp 1 - 6PublisherIOP Publishing Ltd.
SCISCIESCOPUS
Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperatureGo to Link

Ahn, Byung Du; Park, Jin-Seong; Chung, K. B.

ArticleIssue Date2014CitationApplied Physics Letters, v.105, no.16, pp 1 - 6PublisherAmerican Institute of Physics
SCIESCOPUS
Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors byWater Vapor-Assisted High-Pressure Oxygen AnnealingGo to Link

Ahn, Byung Du; Kim, Hyun-Suk; Yun, Dong-Jin; Park, Jin-Seong; Kim, Hyun Jae

ArticleIssue Date2014CitationECS Journal of Solid State Science and Technology, v.3, no.5, pp Q95 - Q98PublisherElectrochemical Society, Inc.
SCISCIESCOPUS
Manifestation of reversal conductivity on high pressurizing of solution-processed ZnSnO thin-film transistors at low temperatureGo to Link

Rim, You Seung; Ahn, Byung Du; Park, Jin-Seong; Kim, Hyun Jae

ArticleIssue Date2014CitationJournal of Physics D: Applied Physics, v.47, no.4, pp 1 - 8PublisherIOP Publishing Ltd.
SCISCIESCOPUS
Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film TransistorsGo to Link

Yoon, Seokhyun; Tak, Young Jun; Yoon, Doo Hyun; Choi, Uy Hyun; Park, Jin-Seong; Ahn, Byung Du; Kim, Hyun Jae

ArticleIssue Date2014CitationACS Applied Materials & Interfaces, v.6, no.16, pp 13496 - 13501PublisherAmerican Chemical Society
SCISCIESCOPUS
The effect of nitrogen incorporation in Ge-In-Ga-O semiconductor and the associated thin film transistorsGo to Link

Ahn, Byung Du; Lee, Kwang Ho; Park, Jozeph; Park, Jin-Seong

ArticleIssue Date2015CitationApplied Surface Science, v.355, pp 1267 - 1271PublisherElsevier BV
SCISCIESCOPUS
The Influence of Oxygen High-Pressure Annealing on the Performance and Bias Instability of Amorphous Ge-In-Ga-O Thin-Film TransistorsGo to Link

Ahn, Byung Du; Kim, Hyun-Suk; Rim, You Seung; Park, Jin-Seong; Kim, Hyun Jae

ArticleIssue Date2014CitationIEEE Transactions on Electron Devices, v.61, no.12, pp 4132 - 4136PublisherInstitute of Electrical and Electronics Engineers
SCISCIESCOPUS
The origin of evolutionary device performance for GeGaInOx thin film transistor as a function of process pressureGo to Link

Ahn, Byung Du; Chung, Kwun-Bum; Park, Jin-Seong

ArticleIssue Date2015CitationJournal of Electroceramics, v.34, no.4, pp 229 - 235PublisherKluwer Academic Publishers
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