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A Study of Sputtered TiN Gate Electrode Etching with Various Wet Chemicals and Post Etch Annealing for Complementary Metal-Oxide-Semiconductor Device Integration ApplicationsGo to Link

Heo, Seung Chan; Yoo, Dongjun; Choi, Moon Suk; Kim, Dohyung; Chung, Chulwon; Choi, Changhwan

ArticleIssue Date2012CitationJapanese Journal of Applied Physics, v.51, no.10, pp 1 - 5PublisherIOP Publishing Ltd
SCIESCOPUS
Analog Synaptic Transistor with Al-Doped HfO2Ferroelectric Thin Film

Kim, Duho; Jeon, Yu-Rim; Ku, Boncheol; Chung, Chulwon; Kim, Tae Heun; Yang, Sangheok; Won, Uiyeon; Jeong, Taeho; Choi, Changhwan

ArticleIssue Date2021CitationACS APPLIED MATERIALS & INTERFACES, v.13, no.44, pp.52743 - 52753PublisherAMER CHEMICAL SOC
SCISCIESCOPUS
Characteristics of Radio Frequency-Sputtered ZnS on the Flexible Polyethylene Terephthalate (PET) SubstrateGo to Link

Yoo, Dongjun; Choi, Moon-Suk; Chung, Chulwon; Heo, Seung Chan; Kim, Dohyung; Choi, Changhwan

ArticleIssue Date2013CitationJournal of Nanoscience and Nanotechnology, v.13, no.12, pp 7814 - 7819PublisherAmerican Scientific Publishers
SCIESCOPUS
Grain size engineering via a Hf0.5Zr0.5O2 seed layer for FeFET memory and synaptic devicesGo to Link

Park, Junhyeok; Chung, Chulwon; Ku, Boncheol; Yun, Seunghyeon; Park, Kyungsoo; Choi, Changhwan

ArticleIssue Date2025CitationNanoscale, v.17, no.16, pp 10324 - 10333PublisherRoyal Society of Chemistry
SCIESCOPUS
Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/HfO<sub>2</sub>/Hf<sub>0.5 </sub>Zr<sub>0.5</sub>O<sub>2</sub> laminated thin films and CF<sub>4</sub> plasma passivation for improved memory and synaptic characteristics of ferroelectric field-effect transistorsGo to Link

Park, Kyungsoo; Chung, Chulwon; Ku, Boncheol; Yun, Seunghyeon; Park, Junhyeok; Choi, Changhwan

ArticleIssue Date2025CitationNanoscale, v.17, no.10, pp 5689 - 5699PublisherRoyal Society of Chemistry
SCIESCOPUS
Improvement of synaptic property of GeSe based CBRAM by engineering the deposition condition of switching matrixGo to Link

Chung, Chulwon; Choi, Changhwan

ArticleIssue Date2024CitationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.179, pp 1 - 8PublisherELSEVIER SCI LTD
SCISCIESCOPUS
Influence of Different Annealing Ambients on the Properties of Zinc Sulfide Prepared by Atomic Layer DepositionGo to Link

Yoo, Dongjun; Heo, Seung Chan; Choi, Moon Suk; Kim, Dohyung; Chung, Chulwon; Choi, Hag Young; Jeon, Hyeongtag; Choi, Changhwan

ArticleIssue Date2013CitationJapanese Journal of Applied Physics, v.52, no.10, pp 1 - 6PublisherIOP Publishing Ltd
SCISCIESCOPUSKCI
Properties of kesterite Cu2ZnSnS4 (CZTS) thin films prepared by sol-gel method using two types of solutionGo to Link

Chung, Chulwon; Rhee, Dongjoon; Yoo, Dongjun; Choi, Moonsuk; Heo, Seung Chan; Kim, Dohyung; Choi, Changhwan

ArticleIssue Date2013CitationJournal of Ceramic Processing Research, v.14, no.2, pp 255 - 259Publisher세라믹공정연구센터
SCISCIESCOPUS
RF-Magnetron Sputtered Kesterite Cu2ZnSnS4 Thin Film Using Single Quaternary Sputtering Target Prepared by Sintering ProcessGo to Link

Yoo, Dongjun; Choi, Moonsuk; Heo, Seung Chan; Kim, Dohyung; Chung, Chulwon; Choi, Changhwan

ArticleIssue Date2013CitationJournal of Nanoscience and Nanotechnology, v.13, no.11, pp 7734 - 7740PublisherAmerican Scientific Publishers
SCISCIESCOPUSKCI
Structural, optical and chemical analysis of zinc sulfide thin film deposited by RF-mganetron sputtering and post deposition annealingGo to Link

Yoo, Dongjun; Choi, Moon Suk; Heo, Seung Chan; Chung, Chulwon; Kim, Dohyung; Choi, Changhwan

ArticleIssue Date2013CitationMetals and Materials International, v.19, no.6, pp 1309 - 1316Publisher대한금속·재료학회
SCIESCOPUS
Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO2 (La:HfO2) and TaN-Based Artificial SynapsesGo to Link

Jeon, Yu-Rim; Kim, Duho; 구본철; Chung, Chulwon; Choi, Changhwan

ArticleIssue Date2023CitationACS Applied Materials & Interfaces, v.15, no.49, pp 57359 - 57368PublisherAmerican Chemical Society
SCIESCOPUS
Synthesis of P-Type ZnO Thin Films with Arsenic Doping and Post AnnealingGo to Link

Chung, Chulwon; Kim, Young Jin; Han, Hoon Hee; Lim, Donghwan; Jung, Woo Suk; Choi, Moon Suk; Nam, Hyo-Jik; Son, Seok-Ki; Sergeevich, Andrey Sokolov; Park, Jin-Hong, et al.

ArticleIssue Date2016CitationScience of Advanced Materials, v.8, no.9, pp 1857 - 1860PublisherAmerican Scientific Publishers
SCIESCOPUS
The effects of inserted layers (HfO2, ZrO2, Y2O3, La2O3) on the ferroelectric and synaptic properties of Zr-doped HfO2 sandwich structureGo to Link

Chung, Chulwon; Park, Kyungsoo; Yun, Seunghyeon; Park, Junhyeok; Jeong, Hyeon Cheol; Choi, Changhwan

ArticleIssue Date2025CitationApplied Surface Science, v.710, pp 1 - 11PublisherElsevier BV
SCIESCOPUS
Zirconium-doped hafnia (HfZrOx) ferroelectric capacitor with atomic layer deposited HfO2, ZrO2, and La2O3 interfacial layersGo to Link

Chung, Chulwon; Lim, Jiyeon; Ku, Boncheol; Park, Kyungsoo; Choi, Changhwan

ArticleIssue Date2025CitationCeramics International, v.51, no.20, pp 30086 - 30092PublisherElsevier
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