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A Study of Sputtered TiN Gate Electrode Etching with Various Wet Chemicals and Post Etch Annealing for Complementary Metal-Oxide-Semiconductor Device Integration Applications Go to Link

Heo, Seung Chan; Yoo, Dongjun; Choi, Moon Suk; Kim, Dohyung; Chung, Chulwon; Choi, Changhwan

ArticleIssue Date2012CitationJapanese Journal of Applied Physics, v.51, no.10, pp 1 - 5PublisherIOP Publishing Ltd

SCISCIESCOPUS

Characteristics of Radio Frequency-Sputtered ZnS on the Flexible Polyethylene Terephthalate (PET) Substrate Go to Link

Yoo, Dongjun; Choi, Moon-Suk; Chung, Chulwon; Heo, Seung Chan; Kim, Dohyung; Choi, Changhwan

ArticleIssue Date2013CitationJournal of Nanoscience and Nanotechnology, v.13, no.12, pp 7814 - 7819PublisherAmerican Scientific Publishers

SCISCIESCOPUS

Influence of Different Annealing Ambients on the Properties of Zinc Sulfide Prepared by Atomic Layer Deposition Go to Link

Yoo, Dongjun; Heo, Seung Chan; Choi, Moon Suk; Kim, Dohyung; Chung, Chulwon; Choi, Hag Young; Jeon, Hyeongtag; Choi, Changhwan

ArticleIssue Date2013CitationJapanese Journal of Applied Physics, v.52, no.10, pp 1 - 6PublisherIOP Publishing Ltd

SCIESCOPUS

Low Gate Leakage Current and Interface State Density of Atomic Layer Deposition Al2O3 SiC MOS Device with NH3 Plasma Treatment Go to Link

Heo, Seung Chan; Jung, Woo Suk; Lim, Donghwan; Yoo, Gwangwe; Park, Jin-Hong; Choi, Changhwan

ArticleIssue Date2016CitationScience of Advanced Materials, v.8, no.9, pp 1866 - 1869PublisherAmerican Scientific Publishers

SCISCIESCOPUS

Plasma atomic layer deposited TiN metal gate for three dimensional device applications: Deposition temperature, capping metal and post annealing Go to Link

Heo, Seung Chan; Choi, Changhwan

ArticleIssue Date2012CitationMicroelectronic Engineering, v.94, pp 11 - 13PublisherElsevier BV

SCISCIESCOPUSKCI

Properties of kesterite Cu2ZnSnS4 (CZTS) thin films prepared by sol-gel method using two types of solution Go to Link

Chung, Chulwon; Rhee, Dongjoon; Yoo, Dongjun; Choi, Moonsuk; Heo, Seung Chan; Kim, Dohyung; Choi, Changhwan

ArticleIssue Date2013CitationJournal of Ceramic Processing Research, v.14, no.2, pp 255 - 259Publisher세라믹공정연구센터

SCISCIESCOPUSKCI

Remote NH3 plasma passivation on the interface between the remote plasma Al2O3 atomic layer deposited and 6H SiC substrate Go to Link

Heo, Seung Chan; Yoo, Dongjun; Choi, Moonsuk; Choi, Changhwan

ArticleIssue Date2012CitationJournal of Ceramic Processing Research, v.13, no.5, pp 657 - 661Publisher세라믹공정연구센터

SCISCIESCOPUS

Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H-2 plasma passivation and post metallization annealing Go to Link

Heo, Seung Chan; Lim, Donghwan; Jung, Woo Suk; Choi, Rino; Yu, Hyun-Yong; Choi, Changhwan

ArticleIssue Date2015CitationMicroelectronic Engineering, v.147, pp 239 - 243PublisherElsevier BV

SCISCIESCOPUS

RF-Magnetron Sputtered Kesterite Cu2ZnSnS4 Thin Film Using Single Quaternary Sputtering Target Prepared by Sintering Process Go to Link

Yoo, Dongjun; Choi, Moonsuk; Heo, Seung Chan; Kim, Dohyung; Chung, Chulwon; Choi, Changhwan

ArticleIssue Date2013CitationJournal of Nanoscience and Nanotechnology, v.13, no.11, pp 7734 - 7740PublisherAmerican Scientific Publishers

SCISCIESCOPUSKCI

Structural, optical and chemical analysis of zinc sulfide thin film deposited by RF-mganetron sputtering and post deposition annealing Go to Link

Yoo, Dongjun; Choi, Moon Suk; Heo, Seung Chan; Chung, Chulwon; Kim, Dohyung; Choi, Changhwan

ArticleIssue Date2013CitationMetals and Materials International, v.19, no.6, pp 1309 - 1316Publisher대한금속·재료학회

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Browsing by Heo, Seung ChanAuthor

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