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SCIESCOPUS
A Route to MoO2 film fabrication via atomic layer deposition using Mo(IV) precursor and oxygen reactant for DRAM applicationsGo to Link

Yoon, Ara; Yang, Hae Lin; Lee, Sanghoon; Lee, Seunghwan; Kim, Beomseok; Jung, Changhwa; Lim, Hanjin; Park, Jin-Seong

ArticleIssue Date2024CitationCeramics International, v.50, no.8, pp 13841 - 13848PublisherElsevier
SCIESCOPUS
Characteristics of High-Crystallinity ZrO2 Thin Films Deposited Using Remote Plasma Atomic Layer DepositionGo to Link

Song, Seokhwi; Jung, Chanwon; Kim, Jisoo; Kim, Younsoo; Lim, Hanjin; Jeon, Hyeongtag

ArticleIssue Date2023CitationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.220, no.1, pp 1 - 5PublisherWILEY-V C H VERLAG GMBH
SCOPUS
Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO2 Thin Filmsopen access

Song, Seokhwi; Kim, Eungju; Kim, Kyunghoo; Bae, Jangho; Lee, Jinho; Jung, Chang Hwa; Lim, Hanjin; Jeon, Hyeongtag

ArticleIssue Date2024CitationECS Advances, v.3, no.1, pp 1 - 5PublisherIOP Publishing
SCOPUS
Designing Robust Interfaces of HZO Module (>1012 at 85 °c) with High Sensing Margin (>300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAMGo to Link

Jeon, Intak; Lim, Hanjin; Kim, Seon-yong; Kim, Jin-soak; Ahn, Sehyoung; Jung, Changhwa; Kwon, Daewoong; Kwon, Hyucknam; Park, Sung-Wook

ArticleIssue Date2025CitationDigest of Technical Papers - Symposium on VLSI Technology, pp 1 - 3
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